دورية أكاديمية
Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)
| العنوان: | Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs) |
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| المؤلفون: | Lee, S.-H., Majhi, P., Oh, J., Sassman, B., Young, C., Bowonder, A., Loh, W.-Y., Choi, K.-J., Cho, B.-J., Lee, H.-D., Kirsch, P., Harris, H. R., Tsai, W., Datta, S., Tseng, H.-H., Banerjee, S. K., Jammy, R. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(9):1017-1020 Sep, 2008 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2008.2002073 |