Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K

التفاصيل البيبلوغرافية
العنوان: Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K
المؤلفون: Lee, E. G., Kim, N. J., Lee, J., Lee, D., Pyun, S.H., Jeong, W.G., Jang, J.W.
المصدر: 2008 International Nano-Optoelectronics Workshop Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International. :255-256 Aug, 2008
Relation: 2008 International Nano-Optoelectronics Workshop (i-Now)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424426560
DOI:10.1109/INOW.2008.4634534