مؤتمر
3-D stress simulation using simple quasi-models of gate oxidation and Silicidation
| العنوان: | 3-D stress simulation using simple quasi-models of gate oxidation and Silicidation |
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| المؤلفون: | Fujinaga, M., Yamauchi, T., Kamohara, S., Nishida, A. |
| المصدر: | 2008 International Conference on Simulation of Semiconductor Processes and Devices Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on. :245-248 Sep, 2008 |
| Relation: | 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424417537 |
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| تدمد: | 19461569 19461577 |
| DOI: | 10.1109/SISPAD.2008.4648283 |