FDSOI devices with thin BOX and ground plane integration for 32nm node and below

التفاصيل البيبلوغرافية
العنوان:	FDSOI devices with thin BOX and ground plane integration for 32nm node and below
المؤلفون:	Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Casse, M., Allain, F., Loubet, N., Pham-NGuyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.
المصدر:	ESSDERC 2008 - 38th European Solid-State Device Research Conference Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European. :206-209 Sep, 2008
Relation:	ESSDERC 2008 - 38th European Solid-State Device Research Conference
قاعدة البيانات:	IEEE Xplore Digital Library