مؤتمر
Pitch fragmentation induced odd/even effects in a 36 nm floating gate NAND technology
| العنوان: | Pitch fragmentation induced odd/even effects in a 36 nm floating gate NAND technology |
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| المؤلفون: | Beug, M. F., Parascandola, S., Hoehr, T., Muller, T., Reichelt, R., Muller-Meskamp, L., Geiser, P., Geppert, T., Bach, L., Bewersdorff-Sarlette, U., Kenny, O., Brandl, S., Marschner, T., Meyer, S., Riedel, S., Specht, M., Manger, D., Knofler, R., Knobloch, K., Kratzert, P., Ludwig, C., Kusters, K.-H. |
| المصدر: | 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS) Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual. :1-5 Nov, 2008 |
| Relation: | 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424436590 9781424424115 |
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| DOI: | 10.1109/NVMT.2008.4731198 |