مؤتمر
A theoretical study Of electrostatic properties Of 〈100〉 uniaxially strained silicon n-channel MOSFET
| العنوان: | A theoretical study Of electrostatic properties Of 〈100〉 uniaxially strained silicon n-channel MOSFET |
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| المؤلفون: | Manzur Rahman, Md. |
| المصدر: | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on. :142-145 Oct, 2008 |
| Relation: | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424421855 9781424421862 |
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| DOI: | 10.1109/ICSICT.2008.4734483 |