مؤتمر
Intrinsic correlation between mobility reduction and Vt shift due to interface dipole modulation in HfSiON/SiO2 stack by La or Al addition
| العنوان: | Intrinsic correlation between mobility reduction and Vt shift due to interface dipole modulation in HfSiON/SiO2 stack by La or Al addition |
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| المؤلفون: | Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita |
| المصدر: | 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008 |
| Relation: | 2008 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424423774 9781424423781 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2008.4796604 |