مؤتمر
Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability
العنوان: | Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability |
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المؤلفون: | Jiang, Y., Liow, T. Y., Singh, N., Tan, L.H., Lo, G. Q., Chan, D. S. H., Kwong, D. L. |
المصدر: | 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008 |
Relation: | 2008 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424423774 9781424423781 |
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تدمد: | 01631918 2156017X |
DOI: | 10.1109/IEDM.2008.4796836 |