Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability

التفاصيل البيبلوغرافية
العنوان: Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability
المؤلفون: Jiang, Y., Liow, T. Y., Singh, N., Tan, L.H., Lo, G. Q., Chan, D. S. H., Kwong, D. L.
المصدر: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Relation: 2008 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424423774
9781424423781
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2008.4796836