0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

التفاصيل البيبلوغرافية
العنوان:	0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
المؤلفون:	Menou, N., Wang, X.P., Kaczer, B., Polspoel, W., Popovici, M., Opsomer, K., Pawlak, M. A., Knaepen, W., Detavernier, C., Blomberg, T., Pierreux, D., Swerts, J., Maes, J. W., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Wouters, D. J., Biesemans, S., Kittl, J. A.
المصدر:	2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Relation:	2008 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library