مؤتمر
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
العنوان: | 0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications |
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المؤلفون: | Menou, N., Wang, X.P., Kaczer, B., Polspoel, W., Popovici, M., Opsomer, K., Pawlak, M. A., Knaepen, W., Detavernier, C., Blomberg, T., Pierreux, D., Swerts, J., Maes, J. W., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Wouters, D. J., Biesemans, S., Kittl, J. A. |
المصدر: | 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008 |
Relation: | 2008 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424423774 9781424423781 |
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تدمد: | 01631918 2156017X |
DOI: | 10.1109/IEDM.2008.4796852 |