دورية أكاديمية
Comparative analysis of hot electron injection and induced device degradation in scaled 0.1 μm SOI n-MOSFETs using Monte Carlo simulation
| العنوان: | Comparative analysis of hot electron injection and induced device degradation in scaled 0.1 μm SOI n-MOSFETs using Monte Carlo simulation |
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| المؤلفون: | Hulfachor, R.B., Kim, K.W., Littlejohn, M.A., Osburn, C.M. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 17(2):53-55 Feb, 1996 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/55.484121 |