مؤتمر
Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium
| العنوان: | Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium |
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| المؤلفون: | Marcon, J., Koumetz, S., Ketata, K., Ketata, M., Launay, P. |
| المصدر: | Proceedings of 8th International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on. :706-709 1996 |
| Relation: | Proceedings of 8th International Conference on Indium Phosphide and Related Materials |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780332830 9780780332836 |
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| DOI: | 10.1109/ICIPRM.1996.492392 |