Extraction of the slow oxide trap density in MOS transistors using the charge pumping method

التفاصيل البيبلوغرافية
العنوان: Extraction of the slow oxide trap density in MOS transistors using the charge pumping method
المؤلفون: Maneglia, Y., Bauza, D., Ouisse, T.
المصدر: 1995 International Semiconductor Conference. CAS '95 Proceedings Semiconductor Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International. :155-158 1995
Relation: 1995 International Semiconductor Conference. CAS '95 Proceedings
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780326474
9780780326477
DOI:10.1109/SMICND.1995.494886