مؤتمر
A Monte Carlo study of drain and channel engineering effects on hot electron injection and induced device degradation in 0.1 /spl mu/m n-MOSFETs
| العنوان: | A Monte Carlo study of drain and channel engineering effects on hot electron injection and induced device degradation in 0.1 /spl mu/m n-MOSFETs |
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| المؤلفون: | Hulfachor, R.B., Kim, K.W., Littlejohn, M.A., Osburn, C.M. |
| المصدر: | 1995 53rd Annual Device Research Conference Digest Device research Device Research Conference, 1995. Digest. 1995 53rd Annual. :14-15 1995 |
| Relation: | 1995 53rd Annual Device Research Conference Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780327888 9780780327887 |
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| DOI: | 10.1109/DRC.1995.496229 |