Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs

التفاصيل البيبلوغرافية
العنوان: Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs
المؤلفون: Matsuoka, T., Kakimoto, S., Nakano, T., Kotaki, H., Hayashida, S., Sugimoto, K., Adachi, K., Morishita, S., Uda, K., Sato, Y., Yamanaka, M., Ogura, T., Takagi, J.
المصدر: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :851-854 1995
Relation: Proceedings of International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780327004
9780780327009
تدمد:01631918
DOI:10.1109/IEDM.1995.499350