Controlling the device field edge to achieve a low power TFSOI technology

التفاصيل البيبلوغرافية
العنوان: Controlling the device field edge to achieve a low power TFSOI technology
المؤلفون: Racanelli, M., Huang, W.M., Shin, H.C., Foerstner, J., Hwang, B.-Y., Cheng, S., Fejes, P.L., Park, H., Wetteroth, T., Hong, S., Shin, H., Wilson, S.R.
المصدر: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :885-888 1995
Relation: Proceedings of International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780327004
9780780327009
تدمد:01631918
DOI:10.1109/IEDM.1995.499358