Re-examination of indium implantation for a low power 0.1 /spl mu/m technology

التفاصيل البيبلوغرافية
العنوان: Re-examination of indium implantation for a low power 0.1 /spl mu/m technology
المؤلفون: Bouillon, P., Benistant, F., Skotnicki, T., Guegan, G., Roche, D., Andre, E., Mathiot, D., Tedesco, S., Martin, F., Heitzmann, M., Lerme, M., Haond, M.
المصدر: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :897-900 1995
Relation: Proceedings of International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780327004
9780780327009
تدمد:01631918
DOI:10.1109/IEDM.1995.499361