Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

التفاصيل البيبلوغرافية
العنوان: Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process
المؤلفون: Soderbarg, A., Edholm, B., Olsson, J., Masszi, F., Eklund, K.H.
المصدر: Proceedings of International Electron Devices Meeting Electron devices Electron Devices Meeting, 1995. IEDM '95., International. :975-978 1995
Relation: Proceedings of International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780327004
9780780327009
تدمد:01631918
DOI:10.1109/IEDM.1995.499379