High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz

التفاصيل البيبلوغرافية
العنوان: High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz
المؤلفون: Pusl, J.A., Brown, J.J., Shealy, J.B., Hu, M., Schmitz, A.E., Docter, D.P., Case, M.G., Thompson, M.A., Nguyen, L.D.
المصدر: 1996 IEEE MTT-S International Microwave Symposium Digest Microwave symposium Microwave Symposium Digest, 1996., IEEE MTT-S International. 2:693-696 vol.2 1996
Relation: 1996 IEEE MTT-S International Microwave Symposium Digest
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780332466
9780780332461
تدمد:0149645X
DOI:10.1109/MWSYM.1996.511034