Evaluation of fixed oxide charge and oxide-silicon interface trap densities in low-dose and high-dose SIMOX wafers

التفاصيل البيبلوغرافية
العنوان: Evaluation of fixed oxide charge and oxide-silicon interface trap densities in low-dose and high-dose SIMOX wafers
المؤلفون: Masui, S., Nakajima, T., Kawamura, K., Yano, T., Hamaguchi, I., Kajiyama, K., Tachimori, M.
المصدر: Proceedings. IEEE International SOI Conference SOI conference SOI Conference, 1994 Proceedings., 1994 IEEE International. :83-84 1994
Relation: Proceedings of 1994 IEEE International SOI Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780324064
9780780324060
DOI:10.1109/SOI.1994.514257