مؤتمر
4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield
| العنوان: | 4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield |
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| المؤلفون: | Zhang, Qingchun, Burk, Al, Husna, Fatima, Callanan, Robert, Agarwal, Anant, Palmour, John, Stahlbush, Robert, Scozzie, Charles |
| المصدر: | 2009 21st International Symposium on Power Semiconductor Devices & IC's Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on. :339-342 Jun, 2009 |
| Relation: | 2009 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424435258 9781424446735 |
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| تدمد: | 10636854 19460201 |
| DOI: | 10.1109/ISPSD.2009.5158071 |