مؤتمر
4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield
العنوان: | 4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield |
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المؤلفون: | Zhang, Qingchun, Burk, Al, Husna, Fatima, Callanan, Robert, Agarwal, Anant, Palmour, John, Stahlbush, Robert, Scozzie, Charles |
المصدر: | 2009 21st International Symposium on Power Semiconductor Devices & IC's Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on. :339-342 Jun, 2009 |
Relation: | 2009 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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