مؤتمر
A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond
| العنوان: | A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond |
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| المؤلفون: | Petry, J., Boccardi, G., Singanamalla, R., Liu, C.S., Xiong, K., Escanes, P., Huguenin, J.-L., Tseng, J., Van Nimwegen, L., Voogt, F., Bulle-Lieuwma, C.W.T., Muller, M. |
| المصدر: | 2009 International Symposium on VLSI Technology, Systems, and Applications VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on. :57-58 Apr, 2009 |
| Relation: | 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424427840 9781424427857 |
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| تدمد: | 1524766X |
| DOI: | 10.1109/VTSA.2009.5159289 |