مؤتمر
High mobility III–V channel MOSFETs for post-Si CMOS applications
العنوان: | High mobility III–V channel MOSFETs for post-Si CMOS applications |
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المؤلفون: | Sun, Yanning, Kiewra, E. W., De Souza, J. P., Koester, S. J., Bucchignano, J. J., Ruiz, N., Fogel, K. E., Sadana, D. K., Shahidi, G. G., Fompeyrine, J., Webb, D. J., Sousa, M., Marchiori, C., Germann, R., Shiu, K. T. |
المصدر: | 2009 IEEE International Conference on IC Design and Technology IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on. :161-164 May, 2009 |
Relation: | 2009 IEEE International Conference on IC Design and Technology (ICICDT) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424429332 9781424429349 |
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تدمد: | 23813555 |
DOI: | 10.1109/ICICDT.2009.5166286 |