مؤتمر
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
| العنوان: | Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm |
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| المؤلفون: | Tega, N., Miki, H., Pagette, F., Frank, D. J., Ray, A., Rooks, M. J., Haensch, W., Torii, K. |
| المصدر: | 2009 Symposium on VLSI Technology VLSI Technology, 2009 Symposium on. :50-51 Jun, 2009 |
| Relation: | 2009 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424433087 |
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| تدمد: | 07431562 21589682 |