AlGaAsSb buffer/barrier layer on GaAs substrate for InAs channel with high electron properties

التفاصيل البيبلوغرافية
العنوان: AlGaAsSb buffer/barrier layer on GaAs substrate for InAs channel with high electron properties
المؤلفون: Miya, S., Muramatsu, S., Kuze, N., Nagase, K., Iwabuchi, T., Ichii, A., Ozaki, M., Shibasaki, I.
المصدر: Seventh International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on. :440-443 1995
Relation: Seventh International Conference on Indium Phosphide and Related Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780321472
9780780321472
DOI:10.1109/ICIPRM.1995.522174