Materials, device and gate oxide integrity evaluation of SIMOX and bonded SOI wafers

التفاصيل البيبلوغرافية
العنوان: Materials, device and gate oxide integrity evaluation of SIMOX and bonded SOI wafers
المؤلفون: Wilson, S.R., Wetteroth, T., Hong, S., Shin, H., Hwang, B.-Y., Racanelli, M., Foerstner, J., Huang, M., Shin, H.C.
المصدر: 1995 IEEE International SOI Conference Proceedings SOI conference SOI Conference, 1995. Proceedings., 1995 IEEE International. :143-145 1995
Relation: 1995 IEEE International SOI Conference Proceedings
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780325478
9780780325470
DOI:10.1109/SOI.1995.526501