Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub

التفاصيل البيبلوغرافية
العنوان: Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub
المؤلفون: Bozada, C.A., Barlage, D.W., Barrette, J.P., Dettmer, R.W., Mack, M.P., Sewell, J.S., Via, G.D., Yang, L.W., Helms, D.R., Komiak, J.J.
المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE. :155-158 1995
Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078032966X
9780780329669
DOI:10.1109/GAAS.1995.528983