Radiation effects in bipolar transistors baised on silicon - germanium heterostructures

التفاصيل البيبلوغرافية
العنوان: Radiation effects in bipolar transistors baised on silicon - germanium heterostructures
المؤلفون: D. V., Gromov, V. V., Elesin, G. V., Chukov, V. V., Repin
المصدر: 2009 19th International Crimean Conference Microwave & Telecommunication Technology Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference. :726-727 Sep, 2009
Relation: 2009 19th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2009)
قاعدة البيانات: IEEE Xplore Digital Library