مؤتمر
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory
العنوان: | Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory |
---|---|
المؤلفون: | Chiu, J.P., Chou, Y.L., Ma, H.C., Tahui Wang, Ku, S.H., Zou, N.K., Chen, Vincent, Lu, W.P., Chen, K.C., Chih-Yuan Lu |
المصدر: | 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009 |
Relation: | 2009 IEEE International Electron Devices Meeting (IEDM) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781424456406 9781424456390 9781424456413 |
---|---|
تدمد: | 01631918 2156017X |
DOI: | 10.1109/IEDM.2009.5424210 |