مؤتمر
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory
| العنوان: | Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory |
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| المؤلفون: | Chiu, J.P., Chou, Y.L., Ma, H.C., Tahui Wang, Ku, S.H., Zou, N.K., Chen, Vincent, Lu, W.P., Chen, K.C., Chih-Yuan Lu |
| المصدر: | 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009 |
| Relation: | 2009 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424456406 9781424456390 9781424456413 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2009.5424210 |