مؤتمر
Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs
| العنوان: | Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs |
|---|---|
| المؤلفون: | Sanghoon Lee, Heung-Jae Cho, Younghwan Son, Lee, Dong Seup, Shin, Hyungcheol |
| المصدر: | 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009 |
| Relation: | 2009 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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