مؤتمر
Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI?
| العنوان: | Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI? |
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| المؤلفون: | Teo, Z. Q., Ang, D. S., See, K. S. |
| المصدر: | 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009 |
| Relation: | 2009 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424456406 9781424456390 9781424456413 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2009.5424233 |