A Novel “hybrid” high-k/metal gate process for 28nm high performance CMOSFETs

التفاصيل البيبلوغرافية
العنوان: A Novel “hybrid” high-k/metal gate process for 28nm high performance CMOSFETs
المؤلفون: Lai, C. M., Lin, C. T., Cheng, L. W., Hsu, C. H., Tseng, J. T., Chiang, T. F., Chou, C. H., Chen, Y. W., Yu, C. H., Hsu, S. H., Chen, C. G., Lee, Z. C., Lin, J. F., Yang, C. L., Ma, G. H., Chien, S. C.
المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009
Relation: 2009 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424456406
9781424456390
9781424456413
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2009.5424256