Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

التفاصيل البيبلوغرافية
العنوان: Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories
المؤلفون: Seidel, K., Hoffmann, R., Lohr, D. A., Melde, T., Czernohorsky, M., Paul, J., Beug, M. F., Beyer, V.
المصدر: 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual. :67-71 Oct, 2009
Relation: 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424449538
9781424449545
DOI:10.1109/NVMT.2009.5429788