Channeling of boron in silicon: experiments and simulation

التفاصيل البيبلوغرافية
العنوان: Channeling of boron in silicon: experiments and simulation
المؤلفون: Hobler, G., Potzl, H., Schork, R., Lorenz, J., Gara, S., Stingeder, G.
المصدر: ESSDERC '90: 20th European Solid State Device Research Conference Solid State Device Research Conference, 1990. ESSDERC '90. 20th European. :217-220 Sep, 1990
Relation: 20th European Solid State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0750300655
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