دورية أكاديمية
Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
| العنوان: | Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET |
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| المؤلفون: | Flachowsky, S., Wei, A., Illgen, R., Herrmann, T., Höntschel, J., Horstmann, M., Klix, W., Stenzel, R. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 57(6):1343-1354 Jun, 2010 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2010.2046461 |