20 Gbit/s Integrated Laser Diode Voltage Driver Using 0.3 μm Gate Length Quantum Well Transistors

التفاصيل البيبلوغرافية
العنوان: 20 Gbit/s Integrated Laser Diode Voltage Driver Using 0.3 μm Gate Length Quantum Well Transistors
المؤلفون: Wang, Z.-G., Berroth, M., Nowotny, U., Hofmann, P., Hulsmann, A., Kaufel, G., Kohler, K., Raynor, B., Schneider, J.
المصدر: ESSCIRC '92: Eighteenth European Solid-State Circuits conference Solid-State Circuits Conference, 1992. ESSCIRC '92. Eighteenth European. :291-294 Sep, 1992
Relation: Eighteenth European Solid State Circuits Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:8798423207
9788798423201
DOI:10.1109/ESSCIRC.1992.5468178