مؤتمر
Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradients
| العنوان: | Electromigration and stress-induced-voiding in dual damascene Cu/low-k interconnects: a complex balance between vacancy and stress gradients |
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| المؤلفون: | Croes, K., Wilson, C.J., Lofrano, M., Vereecke, B., Beyer, G.P., Tokei, Zs. |
| المصدر: | 2010 IEEE International Reliability Physics Symposium Reliability Physics Symposium (IRPS), 2010 IEEE International. :591-598 May, 2010 |
| Relation: | 2010 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424454303 9781424454310 9781424454297 |
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| تدمد: | 15417026 19381891 |
| DOI: | 10.1109/IRPS.2010.5488764 |