Power-switch gate-oxide breakdown tolerance techniques for power-gated SRAM

التفاصيل البيبلوغرافية
العنوان: Power-switch gate-oxide breakdown tolerance techniques for power-gated SRAM
المؤلفون: Yang, Hao-I, Chuang, Ching-Te, Hwang, Wei
المصدر: 2010 IEEE International Conference on Integrated Circuit Design and Technology IC Design and Technology (ICICDT), 2010 IEEE International Conference on. :102-105 Jun, 2010
Relation: 2010 IEEE International Conference on IC Design & Technology (ICICDT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424457731
9781424457748
9781424457755
تدمد:23813555
DOI:10.1109/ICICDT.2010.5510278