مؤتمر
N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development
| العنوان: | N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development |
|---|---|
| المؤلفون: | He, Wei-Zhi, Lin, Heng-Kuang, Chiu, Pei-Chin, Chyi, Jen-Inn, Ko, Chih-Hsin, Kuan, Ta-Ming, Hsieh, Meng-Kuei, Lee, Wen-Chin, Wann, Clement H. |
| المصدر: | 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide & Related Materials (IPRM), 2010 International Conference on. :1-4 May, 2010 |
| Relation: | 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781424459193 9781424459216 9781424459223 |
|---|---|
| تدمد: | 10928669 |
| DOI: | 10.1109/ICIPRM.2010.5516406 |