مؤتمر
A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation
| العنوان: | A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation |
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| المؤلفون: | Hayashi, F., Ohkubo, H., Takahashi, T., Horiba, S., Noda, K., Uchida, T., Shimizu, T., Sugawara, N., Kumashiro, S. |
| المصدر: | International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :283-286 1996 |
| Relation: | International Electron Devices Meeting. Technical Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780333934 9780780333932 |
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| تدمد: | 01631918 |
| DOI: | 10.1109/IEDM.1996.553585 |