مؤتمر
A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation
العنوان: | A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation |
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المؤلفون: | Hayashi, F., Ohkubo, H., Takahashi, T., Horiba, S., Noda, K., Uchida, T., Shimizu, T., Sugawara, N., Kumashiro, S. |
المصدر: | International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :283-286 1996 |
Relation: | International Electron Devices Meeting. Technical Digest |
قاعدة البيانات: | IEEE Xplore Digital Library |
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