16 Mb DRAM/SOI technologies for sub-1 V operation

التفاصيل البيبلوغرافية
العنوان: 16 Mb DRAM/SOI technologies for sub-1 V operation
المؤلفون: Oashi, T., Eimori, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H.
المصدر: International Electron Devices Meeting. Technical Digest Electron devices Electron Devices Meeting, 1996. IEDM '96., International. :609-612 1996
Relation: International Electron Devices Meeting. Technical Digest
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780333934
9780780333932
تدمد:01631918
DOI:10.1109/IEDM.1996.554057