BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

التفاصيل البيبلوغرافية
العنوان: BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V
المؤلفون: Ko, Kwang-Young, Park, Il-Yong, Choi, Yong-Keon, Yoon, Chul-Jin, Moon, Ju-Hyoung, Park, Kyung-Min, Lim, Hyon-Chol, Park, Soon-Yeol, Kim, Nam-Joo, Yoo, Kwang-Dong, Hutter, Lou N.
المصدر: 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on. :71-74 Jun, 2010
Relation: 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424477180
9784886860699
تدمد:10636854
19460201
1943653X