A new 8V – 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

التفاصيل البيبلوغرافية
العنوان:	A new 8V – 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance
المؤلفون:	Ko, Choul-Joo, Cho, Cheol-Ho, Lee, Hee-Bae, Lee, Yong-Jun, Kim, Min-Woo, Bang, Sun-Kyung, Kim, Han-Geon, Lee, Jae-O, Shim, Sang-Chul, Kang, Sun Kyoung, Kim, Nam-Joo, Yoo, Kwang-Dong, Hutter, Lou N.
المصدر:	2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on. :245-248 Jun, 2010
Relation:	2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781424477180 9784886860699
تدمد:	10636854 19460201 1943653X