مؤتمر
Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs
| العنوان: | Increased current gain and reduced emitter resistance in F-implanted, low thermal budget polysilicon emitters for SiGe HBTs |
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| المؤلفون: | Moiseiwitsch, N.E., Schiz, J.F.W., Marsh, C.D., Ashburn, P., Booker, G.R. |
| المصدر: | Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996. :177-180 1996 |
| Relation: | Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780335163 9780780335165 |
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| تدمد: | 10889299 |
| DOI: | 10.1109/BIPOL.1996.554641 |