دورية أكاديمية
Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K
العنوان: | Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K |
---|---|
المؤلفون: | Song, M., MacWilliams, K.P., Woo, J.C.S. |
المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 44(2):268-276 Feb, 1997 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 00189383 15579646 |
---|---|
DOI: | 10.1109/16.557714 |