Nitride gallium high power integrated heterostructure FETs

التفاصيل البيبلوغرافية
العنوان: Nitride gallium high power integrated heterostructure FETs
المؤلفون: Rakov, Yu. N., Monchares, N. V., Bobrova, T. P., Schepina, L. V., Uzelmann, G. F., Mjakishev, Yu. B., Bondareva, T. K., Zazulnikov, A. F., Sveshnikov, Yu. N.
المصدر: 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference. :101-102 Sep, 2010
Relation: 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424471843
9789663353340
DOI:10.1109/CRMICO.2010.5632774