دورية أكاديمية
Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process
| العنوان: | Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process |
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| المؤلفون: | Durgun Ozben, E., Lopes, J.M.J., Nichau, A., Schnee, M., Lenk, S., Besmehn, A., Bourdelle, K.K., Zhao, Q.T., Schubert, J., Mantl, S. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(1):15-17 Jan, 2011 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2010.2089423 |