40nm10T SRAM cell with independent SNM WM and suppress active and leakage power

التفاصيل البيبلوغرافية
العنوان: 40nm10T SRAM cell with independent SNM WM and suppress active and leakage power
المؤلفون: Ya-qi, Ma, Jian-bin, Zheng, Zhao-yong, Zhang, Qi-shuang, Yao, Yong, Wang, Yi-ping, Zhang
المصدر: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :1136-1138 Nov, 2010
Relation: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781424457977
9781424458004
9781424457984
DOI:10.1109/ICSICT.2010.5667575