Slip defect generation on GaAs wafers during high temperature process: a thermoelastic study from a crystallographic viewpoint

التفاصيل البيبلوغرافية
العنوان: Slip defect generation on GaAs wafers during high temperature process: a thermoelastic study from a crystallographic viewpoint
المؤلفون: Sawada, S., Yoshida, H., Kiyama, M., Mukai, H., Nakai, R., Takebe, T., Tatsumi, M., Kaji, M., Fujita, K.
المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 GaAs IC symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual. :50-53 1996
Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078033504X
9780780335042
تدمد:10647775
DOI:10.1109/GAAS.1996.567635